RUMORED BUZZ ON GERMANIUM

Rumored Buzz on Germanium

s is always that with the substrate product. The lattice mismatch brings about a big buildup of pressure Strength in Ge layers epitaxially developed on Si. This strain Electrical power is largely relieved by two mechanisms: (i) technology of lattice dislocations with the interface (misfit dislocations) and (ii) elastic deformation of the two the su

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